by Joe Katzman | Feb 13, 2008 | Contracts - Awards, DARPA, Design Innovations, Electronics - General, Industry & Trends, Materials Innovations, New Systems Tech, R&D - Contracted, T&C - IBM, Transformation, USA
In conventional silicon transistors, a certain finite voltage swing on the order of 150-200 mV (for high performance devices) is needed to switch a device between the on and off states. Reducing that number would enable drastic improvements in power consumption,...
