Advertisement

TriQuint Semiconductor Inc. of Hillsboro, OR received a two-phase, multi-year contract worth up to $31.7 million, in order to develop high power wide band amplifiers in gallium nitride. Gallium nitride devices provide the higher power density and efficiency required for high power phased array radar, electronic warfare, and missile seeker and communications systems. The first phase, lasting three years and valued at $15.8 million, covers the development of gallium nitride material and devices to improve performance and reliability. The second, optional phase covers years four and five and aims to develop gallium nitride high power, wide band amplifiers and package technology. It would be valued at $15.9 million.

TriQuint has worked with gallium nitride since 1999, and is teaming with BAE Systems, Emcore Corporation, II-VI Incorporated, Lockheed Martin and Nitronex, as well as university partners Dr. Michael Shur of Rensselaer Polytechnic Institute and Dr. Jesus del Alamo of the Massachusetts Institute of Technology. The Defense Advanced Research Projects Agency (DARPA) issued the contract. EE Times: TriQuint wins DARPA contract to develop gallium nitride power amp. See also DARPA’s recent contract award to Lockheed Martin.