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The Race to Gallium Nitride

The Race to Gallium Nitride

Defense Industry Daily has done a number of recent articles on R&D around Gallium Nitride semiconductors. The Boston Globe places these developments in a competitive context, noting the commercial advantages that various players in the defense industry stand to gain if they can make breakthroughs in this area….

Raytheon Added to Research List for Gallium Nitride Semiconductors

Raytheon Added to Research List for Gallium Nitride Semiconductors

Raytheon Company’s Integrated Defense Systems (Raytheon IDS) of Tewksbury, MA has been awarded a three-year, $26.9 million Defense Advanced Research Projects Agency (DARPA) contract to optimize and refine the use of Gallium Nitride (GaN) semiconductors. The contract a potential award value of $59.4 million if all program options are exercised….

TriQuint Wins DARPA Gallium Nitride Research Contract

TriQuint Wins DARPA Gallium Nitride Research Contract

TriQuint Semiconductor Inc. of Hillsboro, OR received a two-phase, multi-year contract worth up to $31.7 million, in order to develop high power wide band amplifiers in gallium nitride. Gallium nitride devices provide the higher power density and efficiency required for high power phased array radar, electronic warfare, and missile seeker and communications systems. The first phase…

Northrop Grumman Receives DARPA Contract to Develop Gallium Nitride Components

Northrop Grumman Receives DARPA Contract to Develop Gallium Nitride Components

Northrop Grumman Corporation has received a Defense Advanced Research Projects Agency (DARPA) contract to develop electronic components made from gallium nitride, a next-generation semiconductor material. The three-year, $16.5 million contract for the Wide Band Gap Semiconductors for Radio Frequency Applications initiative is potentially valued at $53.4 million if all program options are exercised. Northrop Grumman began developing this technology in 2002 under a $5.1 million Wide Band Gap Semiconductors Phase 1 contract. Work for the DARPA program will be performed at the Northrop Grumman Space Technology facility in Manhattan Beach, CA and Northrop Grumman Electronic Systems in Baltimore, MD.

DARPA to Take Nitride-based Electronics Research to the NEXT Level

DARPA to Take Nitride-based Electronics Research to the NEXT Level

Big, Hairy, and Audacious(click to view larger) The Defense Advanced Research Projects Agency (DARPA) wants to take research on nitride-based electronic devices and integrated circuits - used in tactical radio systems, phased array radar, and satellite communication -...

GaN: DARPA’s 3-Pronged R&D Strategy

GaN: DARPA’s 3-Pronged R&D Strategy

DID has reported extensively on research contracts related to Gallium Nitride (GaN) semiconductors, which offer significantly higher power and performance. Now CompoundSemiconductor.NET offers an excellent overview of the GaN wide-bandgap semiconductors program and DARPA’s goals….

$12M for R&D into Silicon Carbide Electronics

$12M for R&D into Silicon Carbide Electronics

Cree Inc. in Durham, NC, is being awarded a $12 million cost-plus-fixed-fee contract to develop prototype high voltage switches and diodes using Silicon Carbide. As DID has reported, Cree, Inc. is also part of a team with Raytheon IDS’ WBGS-RF (Wide Bandgap Semiconductors for Radio Frequency) group, doing research into the use of Gallium Nitride for Wide Band Semiconductors…

Triquint Receives Funding for Wide Band Gap Semiconductors

Triquint Receives Funding for Wide Band Gap Semiconductors

Triquint Semiconductor Texas L.P. of Richardson, TX won a $5 million increment as part of a $31.6 million cost-plus-fixed-fee contract for Phase 2 and Phase 3 Research on Wide Band Gap Semiconductors. Work will be performed in Richardson, TX and is expected to be completed by Feb. 14, 2008. Bids were solicited via the web on April 12, 2004, and one bid was received. The U.S. Army Research, Development, and Engineering Command in Adelphi, MD issued the contract (W911QX-05-C-0087). Triquint is also working on Gallium Nitride semiconductor research for DARPA.