Northrop Grumman Wins $28.9M Contract for DARPA High-Power Transistor Research
Sep 17, 2009 14:21 UTC
Northrop Grumman Space & Mission Systems in Redondo Beach, CA won a $28.9 million cost-plus-fixed-fee contract to conduct research for the Defense Advanced Research Projects Agency (DARPA) Nitride Electronic Next Generation Technology (NEXT) Program.
The NEXT program is designed to enable revolutionary advances in nitride electronic devices and integrated circuits resulting in their ability to operate at very high frequencies while maintaining extremely favorable voltage breakdown characteristics. DARPA is looking for ways to overcome the limitations of nitride-based electronics technologies, such as gallium nitride (GaN). “GaN: DARPA’s 3-Pronged R&D Strategy” has more on DARPA’s GaN research efforts.
The program aims to develop high-speed, high-power transistors for use in radar and electronic warfare systems…
