$12M for R&D into Silicon Carbide Electronics

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Cree Inc. in Durham, NC, is being awarded a $12 million cost-plus-fixed-fee contract to develop prototype high voltage switches and diodes using Silicon Carbide. As DID has reported, Cree, Inc. is also part of a team with Raytheon IDS' WBGS-RF (Wide Bandgap Semiconductors for Radio Frequency) group, doing research into the use of Gallium Nitride for Wide Band Semiconductors...

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