This article is included in these additional categories: Contracts - Awards | DARPA | Design Innovations | Electronics - General | Industry & Trends | Materials Innovations | New Systems Tech | R&D - Contracted | T&C - IBM | Transformation | USA
$6.4M to IBM to Research Non-Thermionic Transistors

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In conventional silicon transistors, a certain finite voltage swing on the order of 150-200 mV (for high performance devices) is needed to switch a device between the on and off states. Reducing that number would enable drastic improvements in power consumption, because modern chips have many millions of transistors – but the fundamental physics of […]

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